smd type ic www.kexin.com.cn 1 smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1base 2 collector 3emitter 4 collector 2.0w surface mount complementary pnp silicon power transistor KZT2955 (czt2955) features high current (max. 6a). low voltage (max. 60v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to emitter breakdown voltage v ceo i c =-30ma -60 v collector to emitter breakdown voltage v cer i c =-30ma,r be =100 -70 v i ceo v ce =-30v -700 a i cev v ce =-100v,v eb =-1.5v 1.0 ma emitter cutoff current i ebo v eb =-7.0v -5.0 ma i c =- 4.0a; v ce =-4.0 v 20 70 i c = -6.0a; v ce = -4.0v 5.0 i c = -4.0a; i b =- 400ma -1.1 v base to emitter on voltage v be(on) v ce =-4.0v,i c =-4.0a -1.5 v transition frequency f t i c =- 500ma; v ce =-10v; f = 1.0 mhz 2.5 mhz collctor cutoff current v ce(sat) collector to emitter saturation voltage h fe dc current gain absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -100 v collector - emitter votage v cer -70 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -6 a base current i b -3 a power dissipation p d 2w thermal resistance,junctiion-to-ambient r ja 62.5 /w junction temperature t j 150 storage temperature t stg -65to+150
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